PJA3430 MOSFET. Datasheet pdf. Equivalent

   Type Designator: PJA3430
   Marking Code: A30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.8 nC
   trⓘ - Rise Time: 26.5 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-23

PJA3430 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

PJA3430 Datasheet (PDF)

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pja3430.pdf

PPJA3430 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm)20 V 2A Voltage Current Features RDS(ON) , VGS@4.5V, ID@2.0A

8.1. Size:200K panjit
pja3434.pdf

PPJA3434 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 750mAVoltage Current Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive.. Green molding compound as per IEC61249 Std. (Halo

8.2. Size:227K panjit
pja3431.pdf