All MOSFET. PJE8401 Datasheet

 

PJE8401 Datasheet and Replacement


   Type Designator: PJE8401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 43 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT-523
 

 PJE8401 substitution

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PJE8401 Datasheet (PDF)

 ..1. Size:250K  panjit
 pje8401.pdf pdf_icon

PJE8401

PPJE8401 20V P-Channel Enhancement Mode MOSFET SOT-523 Unit : inch(mm)Voltage -20 V Current -0.9A Features RDS(ON) , VGS@-4.5V, ID@-0.9A

 8.1. Size:206K  panjit
 pje8404.pdf pdf_icon

PJE8401

PPJE8404 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)30 V 0.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.6A

 8.2. Size:242K  panjit
 pje8402.pdf pdf_icon

PJE8401

PPJE8402 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A

 8.3. Size:262K  panjit
 pje8406.pdf pdf_icon

PJE8401

PPJE8406 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)20 V 800mAVoltage Current Features RDS(ON), VGS@4.5V,IDS@500mA=0.4 RDS(ON), VGS@2.5V,IDS@300mA=0.7 RDS(ON), VGS@1.8V,IDS@100mA=1.2(typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead f

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Datasheet: PJC7400 , PJC7401 , PJC7403 , PJC7404 , PJC7406 , PJC7407 , PJE138K , PJE8400 , 2SK3568 , PJE8402 , PJE8403 , PJE8404 , PJE8405 , PJE8406 , PJL9801 , PJQ2888 , PJS50N03 .

History: 2SK2552 | VBFB2412 | FHP10N60A | IXTC220N075T | IRFS7437PBF | SIHF840L | BSC020N025SG

Keywords - PJE8401 MOSFET datasheet

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