All MOSFET. PJE8406 Datasheet

 

PJE8406 Datasheet and Replacement


   Type Designator: PJE8406
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT-523
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PJE8406 Datasheet (PDF)

 ..1. Size:262K  panjit
 pje8406.pdf pdf_icon

PJE8406

PPJE8406 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)20 V 800mAVoltage Current Features RDS(ON), VGS@4.5V,IDS@500mA=0.4 RDS(ON), VGS@2.5V,IDS@300mA=0.7 RDS(ON), VGS@1.8V,IDS@100mA=1.2(typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead f

 8.1. Size:206K  panjit
 pje8404.pdf pdf_icon

PJE8406

PPJE8404 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)30 V 0.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.6A

 8.2. Size:242K  panjit
 pje8402.pdf pdf_icon

PJE8406

PPJE8402 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A

 8.3. Size:242K  panjit
 pje8400.pdf pdf_icon

PJE8406

PPJE8400 20V N-Channel Enhancement Mode MOSFET SOT-523 Unit : inch(mm)20 V 1.1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.1A

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History: VBNC1303 | IRFS4010PBF

Keywords - PJE8406 MOSFET datasheet

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