PJE8406 Datasheet and Replacement
Type Designator: PJE8406
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: SOT-523
PJE8406 substitution
PJE8406 Datasheet (PDF)
pje8406.pdf

PPJE8406 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)20 V 800mAVoltage Current Features RDS(ON), VGS@4.5V,IDS@500mA=0.4 RDS(ON), VGS@2.5V,IDS@300mA=0.7 RDS(ON), VGS@1.8V,IDS@100mA=1.2(typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead f
pje8404.pdf

PPJE8404 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)30 V 0.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.6A
pje8402.pdf

PPJE8402 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm)20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A
pje8400.pdf

PPJE8400 20V N-Channel Enhancement Mode MOSFET SOT-523 Unit : inch(mm)20 V 1.1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.1A
Datasheet: PJC7407 , PJE138K , PJE8400 , PJE8401 , PJE8402 , PJE8403 , PJE8404 , PJE8405 , RFP50N06 , PJL9801 , PJQ2888 , PJS50N03 , PJS6400 , PJS6401 , PJS6404 , PJS6405 , PJS6407 .
History: 24NM60L-TF1-T | SI1428EDH | SST108 | DMG1016V | FHU100N03C | G120N04A | HY3306B
Keywords - PJE8406 MOSFET datasheet
PJE8406 cross reference
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History: 24NM60L-TF1-T | SI1428EDH | SST108 | DMG1016V | FHU100N03C | G120N04A | HY3306B



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