IXTZ27N40MB Datasheet. Specs and Replacement

Type Designator: IXTZ27N40MB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: ZPAK

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IXTZ27N40MB substitution

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IXTZ27N40MB datasheet

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Detailed specifications: IXTP8N50MB, IXTU01N100, IXTU01N80, IXTZ20N60MA, IXTZ20N60MB, IXTZ24N50MA, IXTZ24N50MB, IXTZ27N40MA, IRF1404, IXTZ35N25MA, IXTZ35N25MB, IXTZ42N20MA, IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, J108, J109

Keywords - IXTZ27N40MB MOSFET specs

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