IXTZ27N40MB PDF Specs and Replacement
Type Designator: IXTZ27N40MB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: ZPAK
IXTZ27N40MB substitution
IXTZ27N40MB PDF Specs
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Detailed specifications: IXTP8N50MB , IXTU01N100 , IXTU01N80 , IXTZ20N60MA , IXTZ20N60MB , IXTZ24N50MA , IXTZ24N50MB , IXTZ27N40MA , IRF540N , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 .
Keywords - IXTZ27N40MB MOSFET specs
IXTZ27N40MB cross reference
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IXTZ27N40MB replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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