IXTZ27N40MB MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXTZ27N40MB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: ZPAK

 IXTZ27N40MB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTZ27N40MB Datasheet (PDF)

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Datasheet: IXTP8N50MB , IXTU01N100 , IXTU01N80 , IXTZ20N60MA , IXTZ20N60MB , IXTZ24N50MA , IXTZ24N50MB , IXTZ27N40MA , IRF540 , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 .