All MOSFET. PJS6405 Datasheet

 

PJS6405 Datasheet and Replacement


   Type Designator: PJS6405
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: SOT-23-6L
 

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PJS6405 Datasheet (PDF)

 ..1. Size:265K  panjit
 pjs6405.pdf pdf_icon

PJS6405

PPJS6405 30V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit :inch(mm) Voltage -30 V Current -4.6A Features RDS(ON) , VGS@-10V, ID@-4.6A

 8.1. Size:287K  panjit
 pjs6400.pdf pdf_icon

PJS6405

PPJS6400 30V N-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage 30 V Current 6.4A Features RDS(ON) , VGS@10V, ID@6.4A

 8.2. Size:256K  panjit
 pjs6407.pdf pdf_icon

PJS6405

PPJS6407 30V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage -30 V Current -4.9A Features RDS(ON) , VGS@-10V, ID@-4.9A

 8.3. Size:489K  panjit
 pjs6403.pdf pdf_icon

PJS6405

PPJS6403 30V P-Channel Enhancement Mode MOSFET SOT-23 6L Unit : inch(mm) Voltage -30 V Current -6.4A Features RDS(ON), VGS@-10V, ID@-4A

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History: ZVN0545GTC | HGK105N15M

Keywords - PJS6405 MOSFET datasheet

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