All MOSFET. PJS6417 Datasheet

 

PJS6417 Datasheet and Replacement


   Type Designator: PJS6417
   Marking Code: S17
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18.9 nC
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT-23-6L
 

 PJS6417 substitution

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PJS6417 Datasheet (PDF)

 ..1. Size:291K  panjit
 pjs6417.pdf pdf_icon

PJS6417

PPJS6417 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit: inch(mm) Voltage -20 V Current -6.5A Features RDS(ON) , VGS@-4.5V, ID@-6.5A

 8.1. Size:258K  panjit
 pjs6413.pdf pdf_icon

PJS6417

PPJS6413 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage -20 V Current -4.4A Features RDS(ON) , VGS@-4.5V, ID@-4.4A

 8.2. Size:286K  panjit
 pjs6416.pdf pdf_icon

PJS6417

PPJS6416 20V N-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) 20 V 7.4A Voltage Current Features RDS(ON) , VGS@4.5V, ID@7.4A

 8.3. Size:285K  panjit
 pjs6415.pdf pdf_icon

PJS6417

PPJS6415 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage -20 V Current -5.2A Features RDS(ON) , VGS@-4.5V, ID@-5.2A

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Datasheet: PJS6401 , PJS6404 , PJS6405 , PJS6407 , PJS6413 , PJS6414 , PJS6415 , PJS6416 , P60NF06 , PJS6600 , PJS6800 , PJS6801 , PJS6806 , PJS6809 , PJS6811 , PJS6812 , PJS6815 .

Keywords - PJS6417 MOSFET datasheet

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