PJS6417 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJS6417
Marking Code: S17
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18.9 nC
trⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 148 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT-23-6L
PJS6417 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJS6417 Datasheet (PDF)
pjs6417.pdf
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PPJS6417 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit: inch(mm) Voltage -20 V Current -6.5A Features RDS(ON) , VGS@-4.5V, ID@-6.5A
pjs6413.pdf
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PPJS6413 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage -20 V Current -4.4A Features RDS(ON) , VGS@-4.5V, ID@-4.4A
pjs6416.pdf
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PPJS6416 20V N-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) 20 V 7.4A Voltage Current Features RDS(ON) , VGS@4.5V, ID@7.4A
pjs6415.pdf
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PPJS6415 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage -20 V Current -5.2A Features RDS(ON) , VGS@-4.5V, ID@-5.2A
pjs6414.pdf
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PPJS6414 20V N-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) 20 V 6.6A Voltage Current Features RDS(ON) , VGS@4.5V, ID@6.6A
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
![PJS6417](https://alltransistors.com/images/us.png)
![PJS6417](https://alltransistors.com/images/es.png)
![PJS6417](https://alltransistors.com/images/ru.png)
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