PJS6600 Specs and Replacement

Type Designator: PJS6600

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SOT-23-6L

PJS6600 substitution

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PJS6600 datasheet

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 pjs6600.pdf pdf_icon

PJS6600

PPJS6600 30V Complementary Enhancement Mode MOSFET ESD Protected SOT-23 6L Unit inch(mm) Voltage 30 / -30V Current 1.6 /-1.1A Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Hal... See More ⇒

Detailed specifications: PJS6404, PJS6405, PJS6407, PJS6413, PJS6414, PJS6415, PJS6416, PJS6417, BS170, PJS6800, PJS6801, PJS6806, PJS6809, PJS6811, PJS6812, PJS6815, PJS6816

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