PJS6600 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJS6600
Marking Code: SC0
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 1.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.5 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 19 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SOT-23-6L
PJS6600 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJS6600 Datasheet (PDF)
pjs6600.pdf
PPJS6600 30V Complementary Enhancement Mode MOSFET ESD Protected SOT-23 6L Unit: inch(mm) Voltage 30 / -30V Current 1.6 /-1.1A Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Hal
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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