All MOSFET. PJS6600 Datasheet

 

PJS6600 Datasheet and Replacement


   Type Designator: PJS6600
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SOT-23-6L
 

 PJS6600 substitution

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PJS6600 Datasheet (PDF)

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PJS6600

PPJS6600 30V Complementary Enhancement Mode MOSFET ESD Protected SOT-23 6L Unit: inch(mm) Voltage 30 / -30V Current 1.6 /-1.1A Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Hal

Datasheet: PJS6404 , PJS6405 , PJS6407 , PJS6413 , PJS6414 , PJS6415 , PJS6416 , PJS6417 , CS150N03A8 , PJS6800 , PJS6801 , PJS6806 , PJS6809 , PJS6811 , PJS6812 , PJS6815 , PJS6816 .

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