PJT138K Datasheet and Replacement
Type Designator: PJT138K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.236 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.2 nS
Cossⓘ - Output Capacitance: 9.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: SOT-363
PJT138K substitution
PJT138K Datasheet (PDF)
pjt138k.pdf
PPJT138K 50V N-Channel Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm) 50 V 360mA Voltage Current Features RDS(ON) , VGS@10V, ID@500mA
Datasheet: PJS6806 , PJS6809 , PJS6811 , PJS6812 , PJS6815 , PJS6816 , PJS6832 , PJS6833 , 2N60 , PJT7408 , PJT7600 , PJT7800 , PJT7801 , PJT7802 , PJW1NA50 , PJW1NA60 , PJW1NA60A .
History: HSSC3139 | TSF10N65M | AFN8412 | SE4942B | 2SK2527-01MR | IXTH1N200P3HV | 2SK1520
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History: HSSC3139 | TSF10N65M | AFN8412 | SE4942B | 2SK2527-01MR | IXTH1N200P3HV | 2SK1520
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