PJT7600 Specs and Replacement

Type Designator: PJT7600

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.7 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-363

PJT7600 substitution

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PJT7600 datasheet

 ..1. Size:379K  panjit
 pjt7600.pdf pdf_icon

PJT7600

PPJT7600 20V Complementary Enhancement Mode MOSFET ESD Protected SOT-363 Unit inch(mm) 20 / -20V 1 / -0.7A Voltage Current Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. (Halogen Fr... See More ⇒

 0.1. Size:681K  panjit
 ppjt7600.pdf pdf_icon

PJT7600

PPJT7600 20V Complementary Enhancement Mode MOSFET ESD Protected SOT-363 Unit inch(mm) Voltage 20 / -20V Current 1 / -0.7A Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. ... See More ⇒

Detailed specifications: PJS6811, PJS6812, PJS6815, PJS6816, PJS6832, PJS6833, PJT138K, PJT7408, IRF2807, PJT7800, PJT7801, PJT7802, PJW1NA50, PJW1NA60, PJW1NA60A, PJW1NA80, PJX138K

Keywords - PJT7600 MOSFET specs

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 PJT7600 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.