All MOSFET. PJT7600 Datasheet

 

PJT7600 Datasheet and Replacement


   Type Designator: PJT7600
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.7 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-363
 

 PJT7600 substitution

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PJT7600 Datasheet (PDF)

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PJT7600

PPJT7600 20V Complementary Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm)20 / -20V 1 / -0.7AVoltage Current Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. (Halogen Fr

 0.1. Size:681K  panjit
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PJT7600

PPJT7600 20V Complementary Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm) Voltage 20 / -20V Current 1 / -0.7A Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std.

Datasheet: PJS6811 , PJS6812 , PJS6815 , PJS6816 , PJS6832 , PJS6833 , PJT138K , PJT7408 , IRF2807 , PJT7800 , PJT7801 , PJT7802 , PJW1NA50 , PJW1NA60 , PJW1NA60A , PJW1NA80 , PJX138K .

Keywords - PJT7600 MOSFET datasheet

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