PJT7600 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJT7600
Marking Code: T60
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.6 nC
trⓘ - Rise Time: 25.7 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT-363
PJT7600 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJT7600 Datasheet (PDF)
pjt7600.pdf
PPJT7600 20V Complementary Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm)20 / -20V 1 / -0.7AVoltage Current Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. (Halogen Fr
ppjt7600.pdf
PPJT7600 20V Complementary Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm) Voltage 20 / -20V Current 1 / -0.7A Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXTA110N055T7
History: IXTA110N055T7
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918