All MOSFET. PJX8803 Datasheet

 

PJX8803 Datasheet and Replacement


   Type Designator: PJX8803
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: SOT-563
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PJX8803 Datasheet (PDF)

 ..1. Size:263K  panjit
 pjx8803.pdf pdf_icon

PJX8803

PPJX8803 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit : inch(mm)Voltage -20 V Current -0.6A Features RDS(ON) , VGS@-4.5V, ID@-0.6A

 8.1. Size:267K  panjit
 pjx8802.pdf pdf_icon

PJX8803

PPJX8802 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit : inch(mm)20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A

 8.2. Size:259K  panjit
 pjx8805.pdf pdf_icon

PJX8803

PPJX8805 30V P-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit : inch(mm)Voltage -30 V Current -0.5A Features RDS(ON) , VGS@-4.5V, ID@-0.5A

 8.3. Size:208K  panjit
 pjx8804.pdf pdf_icon

PJX8803

PPJX8804 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit : inch(mm)30 V 0.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.6A

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History: CHM85A3PAGP | SQ9407EY-T1 | ALD1103DB | SML100L16 | SFFX054Z | TK7P65W

Keywords - PJX8803 MOSFET datasheet

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