PJX8806 Datasheet. Specs and Replacement
Type Designator: PJX8806 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: SOT-563
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PJX8806 datasheet
pjx8806.pdf
PPJX8806 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit inch(mm) 20 V 800mA Voltage Current Features RDS(ON), VGS@4.5V,IDS@500mA=0.4 RDS(ON), VGS@2.5V,IDS@300mA=0.7 RDS(ON), VGS@1.8V,IDS@100mA=1.2 (typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead f... See More ⇒
pjx8802.pdf
PPJX8802 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit inch(mm) 20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A... See More ⇒
Detailed specifications: PJW1NA60, PJW1NA60A, PJW1NA80, PJX138K, PJX8802, PJX8803, PJX8804, PJX8805, AO4468, PJZ6NA90, PJZ9NA90, PMBFJ174, PMBFJ175, PMBFJ176, PMBFJ177, PMBFJ620, PMC85XP
Keywords - PJX8806 MOSFET specs
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