All MOSFET. PJX8806 Datasheet

 

PJX8806 Datasheet and Replacement


   Type Designator: PJX8806
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT-563
 
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PJX8806 Datasheet (PDF)

 ..1. Size:264K  panjit
 pjx8806.pdf pdf_icon

PJX8806

PPJX8806 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit : inch(mm)20 V 800mAVoltage Current Features RDS(ON), VGS@4.5V,IDS@500mA=0.4 RDS(ON), VGS@2.5V,IDS@300mA=0.7 RDS(ON), VGS@1.8V,IDS@100mA=1.2(typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead f

 8.1. Size:267K  panjit
 pjx8802.pdf pdf_icon

PJX8806

PPJX8802 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit : inch(mm)20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A

 8.2. Size:259K  panjit
 pjx8805.pdf pdf_icon

PJX8806

PPJX8805 30V P-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit : inch(mm)Voltage -30 V Current -0.5A Features RDS(ON) , VGS@-4.5V, ID@-0.5A

 8.3. Size:263K  panjit
 pjx8803.pdf pdf_icon

PJX8806

PPJX8803 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit : inch(mm)Voltage -20 V Current -0.6A Features RDS(ON) , VGS@-4.5V, ID@-0.6A

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Datasheet: PJW1NA60 , PJW1NA60A , PJW1NA80 , PJX138K , PJX8802 , PJX8803 , PJX8804 , PJX8805 , STP65NF06 , PJZ6NA90 , PJZ9NA90 , PMBFJ174 , PMBFJ175 , PMBFJ176 , PMBFJ177 , PMBFJ620 , PMC85XP .

History: SI2319 | 18P10B | IRF7580MTRPBF

Keywords - PJX8806 MOSFET datasheet

 PJX8806 cross reference
 PJX8806 equivalent finder
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