PJZ6NA90 Specs and Replacement
Type Designator: PJZ6NA90
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 101 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-3PL
PJZ6NA90 substitution
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PJZ6NA90 datasheet
pjf6na90 pjp6na90 pjz6na90.pdf
PPJP6NA90 / PJF6NA90 / PJZ6NA90 900V N-Channel MOSFET 900 V 6 A Voltage Current Features RDS(ON), VGS@10V,ID@3A... See More ⇒
Detailed specifications: PJW1NA60A, PJW1NA80, PJX138K, PJX8802, PJX8803, PJX8804, PJX8805, PJX8806, IRF830, PJZ9NA90, PMBFJ174, PMBFJ175, PMBFJ176, PMBFJ177, PMBFJ620, PMC85XP, PMCM4401VNE
Keywords - PJZ6NA90 MOSFET specs
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