PMC85XP Specs and Replacement
Type Designator: PMC85XP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.485 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: DFN2020-6
PMC85XP substitution
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PMC85XP datasheet
pmc85xp.pdf
PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Trench MOSFET t... See More ⇒
Detailed specifications: PJX8806, PJZ6NA90, PJZ9NA90, PMBFJ174, PMBFJ175, PMBFJ176, PMBFJ177, PMBFJ620, RU7088R, PMCM4401VNE, PMCM4401VPE, PMCM440VNE, PMCM6501VPE, PMCM650VNE, WFF2N65, WFF2N65B, WFF4N60
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
