PMC85XP Datasheet and Replacement
Type Designator: PMC85XP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.485 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 54 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: DFN2020-6
PMC85XP substitution
PMC85XP Datasheet (PDF)
pmc85xp.pdf

PMC85XP30 V P-channel MOSFET with pre-biased NPN transistor15 May 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFETtechnology and NPN Resistor-Equipped Transistor (RET) together in a leadless mediumpower DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.2. Features and benefits Trench MOSFET t
Datasheet: PJX8806 , PJZ6NA90 , PJZ9NA90 , PMBFJ174 , PMBFJ175 , PMBFJ176 , PMBFJ177 , PMBFJ620 , AON7403 , PMCM4401VNE , PMCM4401VPE , PMCM440VNE , PMCM6501VPE , PMCM650VNE , WFF2N65 , WFF2N65B , WFF4N60 .
History: PMCM4401VNE
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History: PMCM4401VNE



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