WFF4N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: WFF4N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 33 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16 nC
Rise Time (tr): 55 nS
Drain-Source Capacitance (Cd): 65 pF
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO-220F
WFF4N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WFF4N60 Datasheet (PDF)
wff4n60.pdf
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WFF4N60WFF4N60WFF4N60WFF4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V,R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri
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