WFF4N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: WFF4N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220F
WFF4N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WFF4N60 Datasheet (PDF)
wff4n60.pdf
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WFF4N60WFF4N60WFF4N60WFF4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V,R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri
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