All MOSFET. WFF4N60 Datasheet

 

WFF4N60 Datasheet and Replacement


   Type Designator: WFF4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220F
 

 WFF4N60 substitution

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WFF4N60 Datasheet (PDF)

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WFF4N60

WFF4N60WFF4N60WFF4N60WFF4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V,R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

Datasheet: PMC85XP , PMCM4401VNE , PMCM4401VPE , PMCM440VNE , PMCM6501VPE , PMCM650VNE , WFF2N65 , WFF2N65B , IRFZ44N , WFF5N60 , WFF5N60B , WFF5N60C , WFF5N65B , WFF5N80 , WFF630 , WFF634 , WFF640 .

History: MTN22N20J3 | TK15J50D | ME13N10A | GSM4804

Keywords - WFF4N60 MOSFET datasheet

 WFF4N60 cross reference
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