WFF4N60 Specs and Replacement

Type Designator: WFF4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220F

WFF4N60 substitution

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WFF4N60 datasheet

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WFF4N60

WFF4N60 WFF4N60 WFF4N60 WFF4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V,R (Max 2.5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Descri... See More ⇒

Detailed specifications: PMC85XP, PMCM4401VNE, PMCM4401VPE, PMCM440VNE, PMCM6501VPE, PMCM650VNE, WFF2N65, WFF2N65B, IRFZ44N, WFF5N60, WFF5N60B, WFF5N60C, WFF5N65B, WFF5N80, WFF630, WFF634, WFF640

Keywords - WFF4N60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.