All MOSFET. WFF730 Datasheet

 

WFF730 Datasheet and Replacement


   Type Designator: WFF730
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220F
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WFF730 Datasheet (PDF)

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WFF730

WFF730WFF730WFF730WFF730Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures5.5A,400V, R (Max 1.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using W

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK3192 | FQD4N25TM

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