All MOSFET. WFF730 Datasheet

 

WFF730 Datasheet and Replacement


   Type Designator: WFF730
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220F
 

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WFF730 Datasheet (PDF)

 ..1. Size:681K  winsemi
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WFF730

WFF730WFF730WFF730WFF730Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures5.5A,400V, R (Max 1.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using W

Datasheet: WFF5N60 , WFF5N60B , WFF5N60C , WFF5N65B , WFF5N80 , WFF630 , WFF634 , WFF640 , IRFZ44 , WFF740 , WFF7N60 , WFF7N65S , WFF830 , WFF840 , WFF840B , WFF8N60 , WFF8N60B .

History: PE532DY | OSG60R1K8PF

Keywords - WFF730 MOSFET datasheet

 WFF730 cross reference
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