WFF730 Specs and Replacement

Type Designator: WFF730

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220F

WFF730 substitution

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WFF730 datasheet

 ..1. Size:681K  winsemi
 wff730.pdf pdf_icon

WFF730

WFF730 WFF730 WFF730 WFF730 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 5.5A,400V, R (Max 1.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using W... See More ⇒

Detailed specifications: WFF5N60, WFF5N60B, WFF5N60C, WFF5N65B, WFF5N80, WFF630, WFF634, WFF640, IRFZ44, WFF740, WFF7N60, WFF7N65S, WFF830, WFF840, WFF840B, WFF8N60, WFF8N60B

Keywords - WFF730 MOSFET specs

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