All MOSFET. WFF7N60 Datasheet

 

WFF7N60 Datasheet and Replacement


   Type Designator: WFF7N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220F
 

 WFF7N60 substitution

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WFF7N60 Datasheet (PDF)

 ..1. Size:722K  winsemi
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WFF7N60

WFF7N60WFF7N60WFF7N60WFF7N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7A,600V,R (Max 1.2)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

 8.1. Size:282K  winsemi
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WFF7N60

WFF7N65SWFF7N65SWFF7N65SWFF7N65S650V Super-Junction Power MOSFET650V Super-Junction Power MOSFET650V Super-Junction Power MOSFET650V Super-Junction Power MOSFETFeaturesD Ultra low Rdson Ultra low gate charge (typ. Qg =19nC) 100% UIS testedG RoHS compliantSGeneral DescriptionPower MOSFET is fabricated using advanced super junctiontechnology. The re

Datasheet: WFF5N60C , WFF5N65B , WFF5N80 , WFF630 , WFF634 , WFF640 , WFF730 , WFF740 , IRF1404 , WFF7N65S , WFF830 , WFF840 , WFF840B , WFF8N60 , WFF8N60B , WFF8N65B , WFF9N50 .

Keywords - WFF7N60 MOSFET datasheet

 WFF7N60 cross reference
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