WFF830 Specs and Replacement

Type Designator: WFF830

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220F

WFF830 substitution

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WFF830 datasheet

 ..1. Size:577K  winsemi
 wff830.pdf pdf_icon

WFF830

WFF830 WFF830 WFF830 WFF830 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,500V,R Max 1.5 )@V =10V DS(on)( GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using W... See More ⇒

Detailed specifications: WFF5N80, WFF630, WFF634, WFF640, WFF730, WFF740, WFF7N60, WFF7N65S, IRFB4110, WFF840, WFF840B, WFF8N60, WFF8N60B, WFF8N65B, WFF9N50, WFF9N90, WFJ5N65B

Keywords - WFF830 MOSFET specs

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