All MOSFET. WFF830 Datasheet

 

WFF830 Datasheet and Replacement


   Type Designator: WFF830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220F
 

 WFF830 substitution

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WFF830 Datasheet (PDF)

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WFF830

WFF830WFF830WFF830WFF830Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,500V,R Max 1.5)@V =10VDS(on)( GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using W

Datasheet: WFF5N80 , WFF630 , WFF634 , WFF640 , WFF730 , WFF740 , WFF7N60 , WFF7N65S , IRF640N , WFF840 , WFF840B , WFF8N60 , WFF8N60B , WFF8N65B , WFF9N50 , WFF9N90 , WFJ5N65B .

History: PB210BM | TSM3548DCX6 | AON6418 | RJK2006DPE | IXFX26N120P | SIHFBC30A | SM6107PSU

Keywords - WFF830 MOSFET datasheet

 WFF830 cross reference
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