WFF8N65B Specs and Replacement

Type Designator: WFF8N65B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-220F

WFF8N65B substitution

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WFF8N65B datasheet

 ..1. Size:695K  winsemi
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WFF8N65B

WFF8N65B WFF8N65B WFF8N65B WFF8N65B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,650V,R (Max1.3 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 25nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General ... See More ⇒

 7.1. Size:215K  winsemi
 wff8n65l.pdf pdf_icon

WFF8N65B

WFF8N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 8.0A,650V,R (Max1.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 14.5nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produce... See More ⇒

 8.1. Size:696K  winsemi
 wff8n60.pdf pdf_icon

WFF8N65B

WFF8N60 WFF8N60 WFF8N60 WFF8N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,600V,R (Max1.2 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Desc... See More ⇒

 8.2. Size:709K  winsemi
 wff8n60b.pdf pdf_icon

WFF8N65B

WFF8N60B WFF8N60B WFF8N60B WFF8N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,600V,R (Max1.2 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General ... See More ⇒

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Detailed specifications: WFF740, WFF7N60, WFF7N65S, WFF830, WFF840, WFF840B, WFF8N60, WFF8N60B, IRF3710, WFF9N50, WFF9N90, WFJ5N65B, WFJ8N65B, WFN1N60, WFN1N60N, WFP10N60, WFP10N65

Keywords - WFF8N65B MOSFET specs

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