WFF9N90 MOSFET. Datasheet pdf. Equivalent
Type Designator: WFF9N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 68 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 58 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 1.35 Ohm
Package: TO-220F
WFF9N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WFF9N90 Datasheet (PDF)
1.1. wff9n90.pdf 
Size:512K _winsemi
WFF9N90 WFF9N90 WFF9N90 WFF9N90 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 9A,900V, R (Max1.35Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 58nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode p
5.1. wff9n50.pdf Size:1048K _winsemi
WFF9N50 WFF9N50 WFF9N50 WFF9N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 9A,500V, R (Max0.75Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 30nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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