All MOSFET. WFF9N90 Datasheet

 

WFF9N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: WFF9N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 58 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 190 pF

Maximum Drain-Source On-State Resistance (Rds): 1.35 Ohm

Package: TO-220F

WFF9N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WFF9N90 Datasheet (PDF)

1.1. wff9n90.pdf Size:512K _winsemi

WFF9N90
WFF9N90

WFF9N90 WFF9N90 WFF9N90 WFF9N90 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 9A,900V, R (Max1.35Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 58nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode p

5.1. wff9n50.pdf Size:1048K _winsemi

WFF9N90
WFF9N90

WFF9N50 WFF9N50 WFF9N50 WFF9N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 9A,500V, R (Max0.75Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 30nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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