WFJ5N65B Datasheet and Replacement
Type Designator: WFJ5N65B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-262
WFJ5N65B substitution
WFJ5N65B Datasheet (PDF)
wfj5n65b.pdf
WFJ5N65BWFJ5N65BWFJ5N65BWFJ5N65BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,650V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical13.3nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce
Datasheet: WFF830 , WFF840 , WFF840B , WFF8N60 , WFF8N60B , WFF8N65B , WFF9N50 , WFF9N90 , AON6414A , WFJ8N65B , WFN1N60 , WFN1N60N , WFP10N60 , WFP10N65 , WFP12N60 , WFP12N65 , WFP12N65S .
History: MSF10N80 | WFF10N60 | WFD5N60B | WFN1N60N | SVF10N60K | WFD830 | WFF9N50
Keywords - WFJ5N65B MOSFET datasheet
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History: MSF10N80 | WFF10N60 | WFD5N60B | WFN1N60N | SVF10N60K | WFD830 | WFF9N50
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