WFJ8N65B Datasheet and Replacement
Type Designator: WFJ8N65B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-262
WFJ8N65B substitution
WFJ8N65B Datasheet (PDF)
wfj8n65b.pdf

WFJ8N65BSilicon N-Channel MOSFETFeatures 7.5A,650V,R (Max1.3)@V =10VDS(on) GS Ultra-low Gate charge(Typical 25nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC)ISO Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. this late
Datasheet: WFF840 , WFF840B , WFF8N60 , WFF8N60B , WFF8N65B , WFF9N50 , WFF9N90 , WFJ5N65B , IRF9540 , WFN1N60 , WFN1N60N , WFP10N60 , WFP10N65 , WFP12N60 , WFP12N65 , WFP12N65S , WFP13N50 .
History: OSG60R060KT3ZF | AOWF4N60 | SI1307DL | 2SK4105 | TPC8401 | FJ6K0101
Keywords - WFJ8N65B MOSFET datasheet
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History: OSG60R060KT3ZF | AOWF4N60 | SI1307DL | 2SK4105 | TPC8401 | FJ6K0101



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