WFJ8N65B MOSFET. Datasheet pdf. Equivalent
Type Designator: WFJ8N65B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-262
WFJ8N65B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WFJ8N65B Datasheet (PDF)
wfj8n65b.pdf
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WFJ8N65BSilicon N-Channel MOSFETFeatures 7.5A,650V,R (Max1.3)@V =10VDS(on) GS Ultra-low Gate charge(Typical 25nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC)ISO Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. this late
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