All MOSFET. WFJ8N65B Datasheet

 

WFJ8N65B Datasheet and Replacement


   Type Designator: WFJ8N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-262
 
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WFJ8N65B Datasheet (PDF)

 ..1. Size:308K  winsemi
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WFJ8N65B

WFJ8N65BSilicon N-Channel MOSFETFeatures 7.5A,650V,R (Max1.3)@V =10VDS(on) GS Ultra-low Gate charge(Typical 25nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC)ISO Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. this late

Datasheet: WFF840 , WFF840B , WFF8N60 , WFF8N60B , WFF8N65B , WFF9N50 , WFF9N90 , WFJ5N65B , IRF9540 , WFN1N60 , WFN1N60N , WFP10N60 , WFP10N65 , WFP12N60 , WFP12N65 , WFP12N65S , WFP13N50 .

History: TSM8N50CP | IRLL2705PBF | PB5G2JU | HGD058N08SL

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