All MOSFET. WFP10N65 Datasheet

 

WFP10N65 Datasheet and Replacement


   Type Designator: WFP10N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO-220
 

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WFP10N65 Datasheet (PDF)

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WFP10N65

WFP10N65WFP10N65WFP10N65WFP10N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,650V,R (Max 0.95)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis

 7.1. Size:614K  winsemi
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WFP10N65

WFP10N60WFP10N60WFP10N60WFP10N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,600V,R (Max 0.75)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis

Datasheet: WFF8N65B , WFF9N50 , WFF9N90 , WFJ5N65B , WFJ8N65B , WFN1N60 , WFN1N60N , WFP10N60 , AON7408 , WFP12N60 , WFP12N65 , WFP12N65S , WFP13N50 , WFP18N20 , WFP18N50 , WFP2N60 , WFP2N60B .

History: FJ6K0101 | TPC8401 | 2SK4105 | SI1307DL | AOWF4N60

Keywords - WFP10N65 MOSFET datasheet

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