WFP10N65 Datasheet and Replacement
Type Designator: WFP10N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 117 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-220
WFP10N65 substitution
WFP10N65 Datasheet (PDF)
wfp10n65.pdf
WFP10N65WFP10N65WFP10N65WFP10N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,650V,R (Max 0.95)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis
wfp10n60.pdf
WFP10N60WFP10N60WFP10N60WFP10N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,600V,R (Max 0.75)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis
Datasheet: WFF8N65B , WFF9N50 , WFF9N90 , WFJ5N65B , WFJ8N65B , WFN1N60 , WFN1N60N , WFP10N60 , IRFP250N , WFP12N60 , WFP12N65 , WFP12N65S , WFP13N50 , WFP18N20 , WFP18N50 , WFP2N60 , WFP2N60B .
History: AP4430GEM | 7NM70L-TMN2-T | VN35AB
Keywords - WFP10N65 MOSFET datasheet
WFP10N65 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP4430GEM | 7NM70L-TMN2-T | VN35AB
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