WFP10N65 Specs and Replacement

Type Designator: WFP10N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO-220

WFP10N65 substitution

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WFP10N65 datasheet

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WFP10N65

WFP10N65 WFP10N65 WFP10N65 WFP10N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 10A,650V,R (Max 0.95 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Improved dv/dt capability General Description This... See More ⇒

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 wfp10n60.pdf pdf_icon

WFP10N65

WFP10N60 WFP10N60 WFP10N60 WFP10N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 10A,600V,R (Max 0.75 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Improved dv/dt capability General Description This... See More ⇒

Detailed specifications: WFF8N65B, WFF9N50, WFF9N90, WFJ5N65B, WFJ8N65B, WFN1N60, WFN1N60N, WFP10N60, IRFP250N, WFP12N60, WFP12N65, WFP12N65S, WFP13N50, WFP18N20, WFP18N50, WFP2N60, WFP2N60B

Keywords - WFP10N65 MOSFET specs

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