WFP4N60 Specs and Replacement

Type Designator: WFP4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-220

WFP4N60 substitution

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WFP4N60 datasheet

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WFP4N60

WFP4N60 WFP4N60 WFP4N60 WFP4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V,R (Max 2.2 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Descri... See More ⇒

Detailed specifications: WFP12N65S, WFP13N50, WFP18N20, WFP18N50, WFP2N60, WFP2N60B, WFP3205, WFP3205T, K3569, WFP50N06, WFP50N06C, WFP5N50, WFP5N60, WFP5N60B, WFP5N80, WFP630, WFP634

Keywords - WFP4N60 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs