WFP50N06 Specs and Replacement

Type Designator: WFP50N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO-220

WFP50N06 substitution

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WFP50N06 datasheet

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WFP50N06

WFP50N06 WFP50N06 WFP50N06 WFP50N06 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features R (Max 22m )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Wi... See More ⇒

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WFP50N06

WFP50N06C WFP50N06C WFP50N06C WFP50N06C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features R (Max 23m )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usin... See More ⇒

Detailed specifications: WFP13N50, WFP18N20, WFP18N50, WFP2N60, WFP2N60B, WFP3205, WFP3205T, WFP4N60, IRFP260, WFP50N06C, WFP5N50, WFP5N60, WFP5N60B, WFP5N80, WFP630, WFP634, WFP640

Keywords - WFP50N06 MOSFET specs

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