All MOSFET. WFP50N06 Datasheet

 

WFP50N06 Datasheet and Replacement


   Type Designator: WFP50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-220
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WFP50N06 Datasheet (PDF)

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WFP50N06

WFP50N06WFP50N06WFP50N06WFP50N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesR (Max 22m)@V =10V DS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Wi

 0.1. Size:586K  winsemi
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WFP50N06

WFP50N06CWFP50N06CWFP50N06CWFP50N06CSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesR (Max 23m)@V =10V DS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usin

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK1553-01MR | IPD068P03L3 | P1610AD | EMP21N03HC | SHD219451 | SVS11N70MJD2 | AP3990R

Keywords - WFP50N06 MOSFET datasheet

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