WFP640 Datasheet and Replacement
Type Designator: WFP640
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 245 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220
WFP640 substitution
WFP640 Datasheet (PDF)
wfp640.pdf
WFP640WFP640WFP640WFP640Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,200V,R (Max 0.18)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 45nC) Fast Switching Capability 100%Avalanche Tested Isolation voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descript
Datasheet: WFP50N06 , WFP50N06C , WFP5N50 , WFP5N60 , WFP5N60B , WFP5N80 , WFP630 , WFP634 , 5N65 , WFP650 , WFP70N06 , WFP70N06T , WFP730 , WFP740 , WFP7N60 , WFP830 , WFP830B .
History: WMN28N60C4 | RU6H5L | WML90R360S | WML14N70C4 | WML100N07TS | WMK80N06TS | WMB060N08LG2
Keywords - WFP640 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: WMN28N60C4 | RU6H5L | WML90R360S | WML14N70C4 | WML100N07TS | WMK80N06TS | WMB060N08LG2
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