WFP640 Specs and Replacement

Type Designator: WFP640

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220

WFP640 substitution

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WFP640 datasheet

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 wfp640.pdf pdf_icon

WFP640

WFP640 WFP640 WFP640 WFP640 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,200V,R (Max 0.18 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 45nC) Fast Switching Capability 100%Avalanche Tested Isolation voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Descript... See More ⇒

Detailed specifications: WFP50N06, WFP50N06C, WFP5N50, WFP5N60, WFP5N60B, WFP5N80, WFP630, WFP634, 5N65, WFP650, WFP70N06, WFP70N06T, WFP730, WFP740, WFP7N60, WFP830, WFP830B

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