WFP730 Specs and Replacement
Type Designator: WFP730
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220
WFP730 substitution
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WFP730 datasheet
wfp730.pdf
WFP730 WFP730 WFP730 WFP730 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 5.5A,400V, R (Max 1.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description General... See More ⇒
Detailed specifications: WFP5N60B, WFP5N80, WFP630, WFP634, WFP640, WFP650, WFP70N06, WFP70N06T, IRF530, WFP740, WFP7N60, WFP830, WFP830B, WFP840, WFP840B, WFP8N60, WFP8N60B
Keywords - WFP730 MOSFET specs
WFP730 cross reference
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History: ME7232 | WFF830
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