All MOSFET. WFP7N60 Datasheet

 

WFP7N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WFP7N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220

 WFP7N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WFP7N60 Datasheet (PDF)

 ..1. Size:652K  winsemi
wfp7n60.pdf

WFP7N60
WFP7N60

WFP7N60WFP7N60WFP7N60WFP7N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures7A,600V,R (Max 1.0)@V =10V DS(on) GS Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche TestedIsolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150)General Descri

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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