WFP8N60B Specs and Replacement

Type Designator: WFP8N60B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

WFP8N60B substitution

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WFP8N60B datasheet

 ..1. Size:703K  winsemi
 wfp8n60b.pdf pdf_icon

WFP8N60B

WFP8N60B WFP8N60B WFP8N60B WFP8N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,600V,R (Max1.2 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced... See More ⇒

 7.1. Size:695K  winsemi
 wfp8n60.pdf pdf_icon

WFP8N60B

WFP8N60 WFP8N60 WFP8N60 WFP8N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,600V,R (Max1.2 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usi... See More ⇒

Detailed specifications: WFP730, WFP740, WFP7N60, WFP830, WFP830B, WFP840, WFP840B, WFP8N60, BS170, WFP9N20, WFU1N60, WFU1N60N, WFU20N06, WFU2N60, WFU2N60B, WFU4N60, WFU5N50

Keywords - WFP8N60B MOSFET specs

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