WFP8N60B Datasheet and Replacement
Type Designator: WFP8N60B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220
WFP8N60B substitution
WFP8N60B Datasheet (PDF)
wfp8n60b.pdf

WFP8N60BWFP8N60BWFP8N60BWFP8N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7.5A,600V,R (Max1.2)@V =10VDS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced
wfp8n60.pdf

WFP8N60WFP8N60WFP8N60WFP8N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7.5A,600V,R (Max1.2)@V =10VDS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi
Datasheet: WFP730 , WFP740 , WFP7N60 , WFP830 , WFP830B , WFP840 , WFP840B , WFP8N60 , CS150N03A8 , WFP9N20 , WFU1N60 , WFU1N60N , WFU20N06 , WFU2N60 , WFU2N60B , WFU4N60 , WFU5N50 .
History: CS6N70K | HFS2N60S | HGA040N06SL | IPSA70R900P7S | BRCS080N04ZC | SPMT9200F | IPT012N06N
Keywords - WFP8N60B MOSFET datasheet
WFP8N60B cross reference
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History: CS6N70K | HFS2N60S | HGA040N06SL | IPSA70R900P7S | BRCS080N04ZC | SPMT9200F | IPT012N06N



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