All MOSFET. WFP8N60B Datasheet

 

WFP8N60B Datasheet and Replacement


   Type Designator: WFP8N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220
 

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WFP8N60B Datasheet (PDF)

 ..1. Size:703K  winsemi
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WFP8N60B

WFP8N60BWFP8N60BWFP8N60BWFP8N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7.5A,600V,R (Max1.2)@V =10VDS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

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WFP8N60B

WFP8N60WFP8N60WFP8N60WFP8N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7.5A,600V,R (Max1.2)@V =10VDS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

Datasheet: WFP730 , WFP740 , WFP7N60 , WFP830 , WFP830B , WFP840 , WFP840B , WFP8N60 , 18N50 , WFP9N20 , WFU1N60 , WFU1N60N , WFU20N06 , WFU2N60 , WFU2N60B , WFU4N60 , WFU5N50 .

History: AP70SL380AI | AM90N06-04M2B | AUIRFP4227 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | UTC654

Keywords - WFP8N60B MOSFET datasheet

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