WFP9N20 Datasheet and Replacement
Type Designator: WFP9N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.4 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220
WFP9N20 substitution
WFP9N20 Datasheet (PDF)
wfp9n20.pdf

WFP9N20WFP9N20WFP9N20WFP9N20Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A, 200V, R (Max 0.4)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi
Datasheet: WFP740 , WFP7N60 , WFP830 , WFP830B , WFP840 , WFP840B , WFP8N60 , WFP8N60B , 10N65 , WFU1N60 , WFU1N60N , WFU20N06 , WFU2N60 , WFU2N60B , WFU4N60 , WFU5N50 , WFU5N60 .
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History: JCS4N70B | TPCF8003



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