WFU1N60N MOSFET Datasheet: N-Ch, 600V, 1A. Full specification with pinout and replacement list

WFU1N60N Specs and Replacement

Type Designator: WFU1N60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 19 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: TO-251

WFU1N60N substitution

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WFU1N60N datasheet

..1. Size:582K winsemi
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WFU1N60N Silicon N-Channel MOSFET Features 1A,600V, RDS(on)(Max 15.0 )@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description Th is Pow er MO S FET is pro du c ed usi ng Win se m i s ad va n ced planar stripe, VDMOS technology. This latest technology has... See More ⇒

7.1. Size:511K winsemi
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WFU1N60 WFU1N60 WFU1N60 WFU1N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 1.3A,600V,R (Max 8.5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced u... See More ⇒

Detailed specifications: WFP830 , WFP830B , WFP840 , WFP840B , WFP8N60 , WFP8N60B , WFP9N20 , WFU1N60 , IRF1407 , WFU20N06 , WFU2N60 , WFU2N60B , WFU4N60 , WFU5N50 , WFU5N60 , WFU5N60B , WFU730 .