All MOSFET. WFU4N60 Datasheet

 

WFU4N60 Datasheet and Replacement


   Type Designator: WFU4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-251
 

 WFU4N60 substitution

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WFU4N60 Datasheet (PDF)

 ..1. Size:512K  winsemi
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WFU4N60

WFU4N60WFU4N60WFU4N60WFU4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V.R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150)General Descr

Datasheet: WFP8N60 , WFP8N60B , WFP9N20 , WFU1N60 , WFU1N60N , WFU20N06 , WFU2N60 , WFU2N60B , SKD502T , WFU5N50 , WFU5N60 , WFU5N60B , WFU730 , WFU830 , WFW064N , WFW13N50 , WFW18N50 .

History: SWD051R08ES | SUD20P15-306 | 2SK788

Keywords - WFU4N60 MOSFET datasheet

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