WFU4N60 Specs and Replacement

Type Designator: WFU4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-251

WFU4N60 substitution

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WFU4N60 datasheet

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 wfu4n60.pdf pdf_icon

WFU4N60

WFU4N60 WFU4N60 WFU4N60 WFU4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V.R (Max 2.5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150 ) General Descr... See More ⇒

Detailed specifications: WFP8N60, WFP8N60B, WFP9N20, WFU1N60, WFU1N60N, WFU20N06, WFU2N60, WFU2N60B, RFP50N06, WFU5N50, WFU5N60, WFU5N60B, WFU730, WFU830, WFW064N, WFW13N50, WFW18N50

Keywords - WFU4N60 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs