WFU730 Specs and Replacement
Type Designator: WFU730
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-251
WFU730 substitution
- MOSFET ⓘ Cross-Reference Search
WFU730 datasheet
wfu730.pdf
WFU730 WFU730 WFU730 WFU730 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 5.5A,400V, R (Max 1.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using W... See More ⇒
Detailed specifications: WFU1N60N, WFU20N06, WFU2N60, WFU2N60B, WFU4N60, WFU5N50, WFU5N60, WFU5N60B, 20N50, WFU830, WFW064N, WFW13N50, WFW18N50, WFW18N50N, WFW18N50W, WFW20N60W, WFW24N50N
Keywords - WFU730 MOSFET specs
WFU730 cross reference
WFU730 equivalent finder
WFU730 pdf lookup
WFU730 substitution
WFU730 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
