All MOSFET. WFU830 Datasheet

 

WFU830 Datasheet and Replacement


   Type Designator: WFU830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-251
 

 WFU830 substitution

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WFU830 Datasheet (PDF)

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WFU830

WFU830WFU830WFU830WFU830Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,500V,R Max 1.5)@V =10VDS(on)( GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using W

Datasheet: WFU20N06 , WFU2N60 , WFU2N60B , WFU4N60 , WFU5N50 , WFU5N60 , WFU5N60B , WFU730 , CS150N03A8 , WFW064N , WFW13N50 , WFW18N50 , WFW18N50N , WFW18N50W , WFW20N60W , WFW24N50N , WFW24N50W .

History: ME2306D-G | AP3700YT | IRF3704PBF | IRH7250 | AOB296L | F10W90HVX2 | RQ3E100BN

Keywords - WFU830 MOSFET datasheet

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