WFU830 Specs and Replacement
Type Designator: WFU830
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-251
WFU830 substitution
- MOSFET ⓘ Cross-Reference Search
WFU830 datasheet
wfu830.pdf
WFU830 WFU830 WFU830 WFU830 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,500V,R Max 1.5 )@V =10V DS(on)( GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using W... See More ⇒
Detailed specifications: WFU20N06, WFU2N60, WFU2N60B, WFU4N60, WFU5N50, WFU5N60, WFU5N60B, WFU730, IRF520, WFW064N, WFW13N50, WFW18N50, WFW18N50N, WFW18N50W, WFW20N60W, WFW24N50N, WFW24N50W
Keywords - WFU830 MOSFET specs
WFU830 cross reference
WFU830 equivalent finder
WFU830 pdf lookup
WFU830 substitution
WFU830 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
