WFW064N Datasheet and Replacement
Type Designator: WFW064N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 185 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 109 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 1290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-247
- MOSFET Cross-Reference Search
WFW064N Datasheet (PDF)
wfw064n.pdf

WFW064NWFW064NWFW064NWFW064NSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 109A,60V, R (Max 8m)@V =10VDS(on) GS Ultra-low Gate charge(Typical 50nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: KNF6650A | AFN5800 | IRLM120A | 9N90L-TF1 | HGP059N08A | ME2306AN | MTB4D0N03ATH8
Keywords - WFW064N MOSFET datasheet
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History: KNF6650A | AFN5800 | IRLM120A | 9N90L-TF1 | HGP059N08A | ME2306AN | MTB4D0N03ATH8



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