All MOSFET. WFW064N Datasheet

 

WFW064N Datasheet and Replacement


   Type Designator: WFW064N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 185 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 109 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 1290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-247
 

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WFW064N Datasheet (PDF)

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WFW064N

WFW064NWFW064NWFW064NWFW064NSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 109A,60V, R (Max 8m)@V =10VDS(on) GS Ultra-low Gate charge(Typical 50nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

Datasheet: WFU2N60 , WFU2N60B , WFU4N60 , WFU5N50 , WFU5N60 , WFU5N60B , WFU730 , WFU830 , IRFB31N20D , WFW13N50 , WFW18N50 , WFW18N50N , WFW18N50W , WFW20N60W , WFW24N50N , WFW24N50W , WFW40N25W .

History: OSG60R180DT3F | SSF2341E | STD35NF3LLT4 | IXTT140N10P | CJS9004 | IXFH15N80Q | FIR80N03LG

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