All MOSFET. WFW13N50 Datasheet

 

WFW13N50 Datasheet and Replacement


   Type Designator: WFW13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 218 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
   Package: TO-3P
 

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WFW13N50 Datasheet (PDF)

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WFW13N50

WFW13N50WFW13N50WFW13N50WFW13N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 13A,500V, R (Max0.46)@V =10VDS(on) GS Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce

Datasheet: WFU2N60B , WFU4N60 , WFU5N50 , WFU5N60 , WFU5N60B , WFU730 , WFU830 , WFW064N , IRF2807 , WFW18N50 , WFW18N50N , WFW18N50W , WFW20N60W , WFW24N50N , WFW24N50W , WFW40N25W , WFW9N90 .

History: RQJ0306FQDQS | IPD60R1K0CE | AP3A010MT | HUFA76419S3S | IPD040N03L | BSC042N03MSG | 2SK1947

Keywords - WFW13N50 MOSFET datasheet

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