WFW13N50 Specs and Replacement

Type Designator: WFW13N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 218 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: TO-3P

WFW13N50 substitution

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WFW13N50 datasheet

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WFW13N50

WFW13N50 WFW13N50 WFW13N50 WFW13N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 13A,500V, R (Max0.46 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produce... See More ⇒

Detailed specifications: WFU2N60B, WFU4N60, WFU5N50, WFU5N60, WFU5N60B, WFU730, WFU830, WFW064N, STF13NM60N, WFW18N50, WFW18N50N, WFW18N50W, WFW20N60W, WFW24N50N, WFW24N50W, WFW40N25W, WFW9N90

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.