All MOSFET. WFW24N50N Datasheet

 

WFW24N50N Datasheet and Replacement


   Type Designator: WFW24N50N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-3PN
 

 WFW24N50N substitution

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WFW24N50N Datasheet (PDF)

 ..1. Size:428K  winsemi
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WFW24N50N

WFW24N50NWFW24N50NWFW24N50NWFW24N50NSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 24A,500V,RDS(on)(Max0.19)@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mod

 6.1. Size:463K  winsemi
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WFW24N50N

WFW24N50WWFW24N50WWFW24N50WWFW24N50WSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 24A,500V,RDS(on)(Max0.19)@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mod

Datasheet: WFU730 , WFU830 , WFW064N , WFW13N50 , WFW18N50 , WFW18N50N , WFW18N50W , WFW20N60W , IRF520 , WFW24N50W , WFW40N25W , WFW9N90 , WFW9N90W , WFY3N02 , WFY3P02 , WFY4101 , WFY5N03 .

History: BUK725R0-40C | BLP02N06-P | AONS66406 | AP4439GH-HF | HM5N06R | NCE65NF068LL | BLP038N10GL-D

Keywords - WFW24N50N MOSFET datasheet

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