All MOSFET. WFW40N25W Datasheet

 

WFW40N25W Datasheet and Replacement


   Type Designator: WFW40N25W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 620 nS
   Cossⓘ - Output Capacitance: 685 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: TO-247
 

 WFW40N25W substitution

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WFW40N25W Datasheet (PDF)

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WFW40N25W

WFW40N25WWFW40N25WWFW40N25WWFW40N25WSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 40A,250V,R (Max0.068)@V =10VDS(on) GS Ultra-low Gate charge(Typical 87nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhanceme

Datasheet: WFW064N , WFW13N50 , WFW18N50 , WFW18N50N , WFW18N50W , WFW20N60W , WFW24N50N , WFW24N50W , IRF730 , WFW9N90 , WFW9N90W , WFY3N02 , WFY3P02 , WFY4101 , WFY5N03 , WFY5P03 , WFY6N02 .

History: SSFM1022

Keywords - WFW40N25W MOSFET datasheet

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