All MOSFET. WFW40N25W Datasheet

 

WFW40N25W MOSFET. Datasheet pdf. Equivalent


   Type Designator: WFW40N25W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 620 nS
   Cossⓘ - Output Capacitance: 685 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: TO-247

 WFW40N25W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WFW40N25W Datasheet (PDF)

 ..1. Size:490K  winsemi
 wfw40n25w.pdf

WFW40N25W WFW40N25W

WFW40N25WWFW40N25WWFW40N25WWFW40N25WSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 40A,250V,R (Max0.068)@V =10VDS(on) GS Ultra-low Gate charge(Typical 87nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhanceme

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