All MOSFET. WFY3N02 Datasheet

 

WFY3N02 Datasheet and Replacement


   Type Designator: WFY3N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT-23
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WFY3N02 Datasheet (PDF)

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WFY3N02

WFY3N02WFY3N02WFY3N02WFY3N0220V N-Channel MOSFET20V N-Channel MOSFET20V N-Channel MOSFET20V N-Channel MOSFETFeatures 2.8A, 20V, R (Max 65m)@V =-4.5VDS(on) GS 1.2 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Single Pulse Avalanche Energy Rated Halogen-freeGeneral DescriptionDDDDThis Power MOSFET is produced

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFN38N80Q2 | IPD075N03LG | SHD226412R | IXTB30N100L | WSD3042DN56 | AO3498 | RS1E200BN

Keywords - WFY3N02 MOSFET datasheet

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