WFY3N02 Specs and Replacement

Type Designator: WFY3N02

Marking Code: H04F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V

Qg ⓘ - Total Gate Charge: 7.5 nC

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT-23

WFY3N02 substitution

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WFY3N02 datasheet

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WFY3N02

WFY3N02 WFY3N02 WFY3N02 WFY3N02 20V N-Channel MOSFET 20V N-Channel MOSFET 20V N-Channel MOSFET 20V N-Channel MOSFET Features 2.8A, 20V, R (Max 65m )@V =-4.5V DS(on) GS 1.2 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Single Pulse Avalanche Energy Rated Halogen-free General Description D D D D This Power MOSFET is produced ... See More ⇒

Detailed specifications: WFW18N50N, WFW18N50W, WFW20N60W, WFW24N50N, WFW24N50W, WFW40N25W, WFW9N90, WFW9N90W, 7N60, WFY3P02, WFY4101, WFY5N03, WFY5P03, WFY6N02, PMCPB5530X, PMCXB900UE, PMDPB28UN

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