All MOSFET. WFY4101 Datasheet

 

WFY4101 Datasheet and Replacement


   Type Designator: WFY4101
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.6 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23
 

 WFY4101 substitution

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WFY4101 Datasheet (PDF)

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WFY4101

WFY4101WFY4101WFY4101WFY4101Trench Power MOSFETTrench Power MOSFETTrench Power MOSFETTrench Power MOSFET-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23Features -3.2A, -20V, RDS(on)(Max 85m)@VGS=-4.5V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprin

Datasheet: WFW20N60W , WFW24N50N , WFW24N50W , WFW40N25W , WFW9N90 , WFW9N90W , WFY3N02 , WFY3P02 , STP65NF06 , WFY5N03 , WFY5P03 , WFY6N02 , PMCPB5530X , PMCXB900UE , PMDPB28UN , PMDPB30XN , PMDPB38UNE .

History: SVF1N60AD | P3606BEA | SVS7N65MJD2 | UPA1913 | AUIRF7736M2TR1 | STF16N50M2 | SVS7N60DD2TR

Keywords - WFY4101 MOSFET datasheet

 WFY4101 cross reference
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