All MOSFET. WFY4101 Datasheet

 

WFY4101 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WFY4101
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 12.6 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23

 WFY4101 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WFY4101 Datasheet (PDF)

 ..1. Size:326K  winsemi
 wfy4101.pdf

WFY4101 WFY4101

WFY4101WFY4101WFY4101WFY4101Trench Power MOSFETTrench Power MOSFETTrench Power MOSFETTrench Power MOSFET-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23Features -3.2A, -20V, RDS(on)(Max 85m)@VGS=-4.5V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprin

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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