WFY5N03 Datasheet and Replacement
Type Designator: WFY5N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 99 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SOT-23
WFY5N03 substitution
WFY5N03 Datasheet (PDF)
wfy5n03.pdf

WFY5N03WFY5N03WFY5N03WFY5N0330V N-Channel MOSFET30V N-Channel MOSFET30V N-Channel MOSFET30V N-Channel MOSFETFeatures 5.8A, 30V, R (Max 33m)@V =-4.5VDS(on) GS 1.4V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Single Pulse Avalanche Energy Rated Halogen-freeGeneral DescriptionDDDDThis Power MOSFET is produced u
Datasheet: WFW24N50N , WFW24N50W , WFW40N25W , WFW9N90 , WFW9N90W , WFY3N02 , WFY3P02 , WFY4101 , IRF1405 , WFY5P03 , WFY6N02 , PMCPB5530X , PMCXB900UE , PMDPB28UN , PMDPB30XN , PMDPB38UNE , PMDPB42UN .
History: 2SK1386-01 | 2SK578 | AFN4134 | NCE70N900I | GSM6424 | TPCA8008-H | CS5N65A3
Keywords - WFY5N03 MOSFET datasheet
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History: 2SK1386-01 | 2SK578 | AFN4134 | NCE70N900I | GSM6424 | TPCA8008-H | CS5N65A3



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