WFY5P03 Specs and Replacement

Type Designator: WFY5P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.8 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SOT-23

WFY5P03 substitution

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WFY5P03 datasheet

 ..1. Size:311K  winsemi
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WFY5P03

WFY5P03 WFY5P03 WFY5P03 WFY5P03 -30V P-Channel MOSFET -30V P-Channel MOSFET -30V P-Channel MOSFET -30V P-Channel MOSFET Features -4.3A, -30V, R (Max 58m )@V =-4.5V DS(on) GS -2.5V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi s advan... See More ⇒

Detailed specifications: WFW24N50W, WFW40N25W, WFW9N90, WFW9N90W, WFY3N02, WFY3P02, WFY4101, WFY5N03, IRLB3034, WFY6N02, PMCPB5530X, PMCXB900UE, PMDPB28UN, PMDPB30XN, PMDPB38UNE, PMDPB42UN, PMDPB55XP

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