All MOSFET. WFY5P03 Datasheet

 

WFY5P03 Datasheet and Replacement


   Type Designator: WFY5P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOT-23
 

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WFY5P03 Datasheet (PDF)

 ..1. Size:311K  winsemi
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WFY5P03

WFY5P03WFY5P03WFY5P03WFY5P03-30V P-Channel MOSFET-30V P-Channel MOSFET-30V P-Channel MOSFET-30V P-Channel MOSFETFeatures -4.3A, -30V, R (Max 58m)@V =-4.5VDS(on) GS -2.5V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Single Pulse Avalanche Energy RatedGeneral DescriptionThis Power MOSFET is produced using Winsemisadvan

Datasheet: WFW24N50W , WFW40N25W , WFW9N90 , WFW9N90W , WFY3N02 , WFY3P02 , WFY4101 , WFY5N03 , 60N06 , WFY6N02 , PMCPB5530X , PMCXB900UE , PMDPB28UN , PMDPB30XN , PMDPB38UNE , PMDPB42UN , PMDPB55XP .

History: APT3580BN | RSR030N06

Keywords - WFY5P03 MOSFET datasheet

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