WFY5P03 Datasheet and Replacement
Type Designator: WFY5P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 4.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 108 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOT-23
WFY5P03 Datasheet (PDF)
wfy5p03.pdf

WFY5P03WFY5P03WFY5P03WFY5P03-30V P-Channel MOSFET-30V P-Channel MOSFET-30V P-Channel MOSFET-30V P-Channel MOSFETFeatures -4.3A, -30V, R (Max 58m)@V =-4.5VDS(on) GS -2.5V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Single Pulse Avalanche Energy RatedGeneral DescriptionThis Power MOSFET is produced using Winsemisadvan
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: QM0004S | HYG092N10LS1C2 | IRLU2908 | IRFBC30AS | IXTP2N60P | 2SK741
Keywords - WFY5P03 MOSFET datasheet
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History: QM0004S | HYG092N10LS1C2 | IRLU2908 | IRFBC30AS | IXTP2N60P | 2SK741



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