All MOSFET. WFY5P03 Datasheet

 

WFY5P03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WFY5P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.3 nC
   trⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOT-23

 WFY5P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WFY5P03 Datasheet (PDF)

 ..1. Size:311K  winsemi
 wfy5p03.pdf

WFY5P03 WFY5P03

WFY5P03WFY5P03WFY5P03WFY5P03-30V P-Channel MOSFET-30V P-Channel MOSFET-30V P-Channel MOSFET-30V P-Channel MOSFETFeatures -4.3A, -30V, R (Max 58m)@V =-4.5VDS(on) GS -2.5V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Single Pulse Avalanche Energy RatedGeneral DescriptionThis Power MOSFET is produced using Winsemisadvan

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRLL2703

 

 
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