WFY6N02 Specs and Replacement

Type Designator: WFY6N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT-23

WFY6N02 substitution

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WFY6N02 datasheet

 ..1. Size:381K  winsemi
 wfy6n02.pdf pdf_icon

WFY6N02

WFY6N02 WFY6N02 WFY6N02 WFY6N02 20V N-Channel MOSFET 20V N-Channel MOSFET 20V N-Channel MOSFET 20V N-Channel MOSFET Features Features Features Features 6A, 20V, R (Max 40m )@V =4.5V DS(on) GS 1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Single Pulse Avalanche Energy Rated RoHS compliant General Description General Descri... See More ⇒

Detailed specifications: WFW40N25W, WFW9N90, WFW9N90W, WFY3N02, WFY3P02, WFY4101, WFY5N03, WFY5P03, IRF9640, PMCPB5530X, PMCXB900UE, PMDPB28UN, PMDPB30XN, PMDPB38UNE, PMDPB42UN, PMDPB55XP, PMDPB56XN

Keywords - WFY6N02 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.