PMDT290UNE Specs and Replacement

Type Designator: PMDT290UNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: SOT-666

PMDT290UNE substitution

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PMDT290UNE datasheet

 ..1. Size:175K  nxp
 pmdt290une.pdf pdf_icon

PMDT290UNE

PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protec... See More ⇒

 6.1. Size:242K  nxp
 pmdt290uce.pdf pdf_icon

PMDT290UNE

PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev. 1 6 October 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switchin... See More ⇒

Detailed specifications: PMDPB58UPE, PMDPB70EN, PMDPB70XP, PMDPB70XPE, PMDPB80XP, PMDPB85UPE, PMDPB95XNE, PMDT290UCE, 20N60, PMDT670UPE, PMDXB1200UPE, PMDXB550UNE, PMDXB600UNE, PMDXB950UPE, PMF63UN, PMF77XN, PMF87EN

Keywords - PMDT290UNE MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.