All MOSFET. PMDT290UNE Datasheet

 

PMDT290UNE Datasheet and Replacement


   Type Designator: PMDT290UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT-666
 

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PMDT290UNE Datasheet (PDF)

 ..1. Size:175K  nxp
 pmdt290une.pdf pdf_icon

PMDT290UNE

PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFETRev. 1 13 September 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protec

 6.1. Size:242K  nxp
 pmdt290uce.pdf pdf_icon

PMDT290UNE

PMDT290UCE20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFETRev. 1 6 October 2011 Product data sheet1. Product profile1.1 General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switchin

Datasheet: PMDPB58UPE , PMDPB70EN , PMDPB70XP , PMDPB70XPE , PMDPB80XP , PMDPB85UPE , PMDPB95XNE , PMDT290UCE , 20N60 , PMDT670UPE , PMDXB1200UPE , PMDXB550UNE , PMDXB600UNE , PMDXB950UPE , PMF63UN , PMF77XN , PMF87EN .

History: 2SK3341W | JCS4N70V | STV60NE06-16

Keywords - PMDT290UNE MOSFET datasheet

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