PMDT290UNE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMDT290UNE
Marking Code: AE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 0.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.45 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SOT-666
PMDT290UNE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMDT290UNE Datasheet (PDF)
pmdt290une.pdf
PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFETRev. 1 13 September 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protec
pmdt290uce.pdf
PMDT290UCE20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFETRev. 1 6 October 2011 Product data sheet1. Product profile1.1 General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switchin
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