PMDT670UPE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMDT670UPE
Marking Code: AG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 0.55 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.76 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: SOT-666
PMDT670UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMDT670UPE Datasheet (PDF)
..1. Size:171K nxp
pmdt670upe.pdf
pmdt670upe.pdf
PMDT670UPE20 V, 550 mA dual P-channel Trench MOSFETRev. 1 13 September 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protec
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