All MOSFET. PMDT670UPE Datasheet

 

PMDT670UPE Datasheet and Replacement


   Type Designator: PMDT670UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT-666
 

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PMDT670UPE Datasheet (PDF)

 ..1. Size:171K  nxp
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PMDT670UPE

PMDT670UPE20 V, 550 mA dual P-channel Trench MOSFETRev. 1 13 September 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protec

Datasheet: PMDPB70EN , PMDPB70XP , PMDPB70XPE , PMDPB80XP , PMDPB85UPE , PMDPB95XNE , PMDT290UCE , PMDT290UNE , IRF540 , PMDXB1200UPE , PMDXB550UNE , PMDXB600UNE , PMDXB950UPE , PMF63UN , PMF77XN , PMF87EN , PMFPB8032XP .

History: S-LP2305DSLT1G | NX7002BK | RU1H130Q | SE2321 | AP70SL380AH | LSE65R125HT | HFP730S

Keywords - PMDT670UPE MOSFET datasheet

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