PMDT670UPE Specs and Replacement

Type Designator: PMDT670UPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: SOT-666

PMDT670UPE substitution

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PMDT670UPE datasheet

 ..1. Size:171K  nxp
 pmdt670upe.pdf pdf_icon

PMDT670UPE

PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protec... See More ⇒

Detailed specifications: PMDPB70EN, PMDPB70XP, PMDPB70XPE, PMDPB80XP, PMDPB85UPE, PMDPB95XNE, PMDT290UCE, PMDT290UNE, IRF540N, PMDXB1200UPE, PMDXB550UNE, PMDXB600UNE, PMDXB950UPE, PMF63UN, PMF77XN, PMF87EN, PMFPB8032XP

Keywords - PMDT670UPE MOSFET specs

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