All MOSFET. PMF63UN Datasheet

 

PMF63UN Datasheet and Replacement


   Type Designator: PMF63UN
   Marking Code: V8*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.275 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.2 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
   Package: SC-70
 

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PMF63UN Datasheet (PDF)

 ..1. Size:863K  nxp
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PMF63UN

PMF63UN20 V, single N-channel Trench MOSFETRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast

 0.1. Size:712K  nxp
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PMF63UN

PMF63UNE20 V, N-channel Trench MOSFET20 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage ElectroStatic Discharge (ESD) protection >

Datasheet: PMDPB95XNE , PMDT290UCE , PMDT290UNE , PMDT670UPE , PMDXB1200UPE , PMDXB550UNE , PMDXB600UNE , PMDXB950UPE , IRF640 , PMF77XN , PMF87EN , PMFPB8032XP , PMFPB8040XP , PMG45UN , PMGD130UN , PMGD175XN , PMGD290UCEA .

History: JCS4N80V

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