All MOSFET. PMF63UN Datasheet

 

PMF63UN MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMF63UN
   Marking Code: V8*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.275 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.2 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
   Package: SC-70

 PMF63UN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMF63UN Datasheet (PDF)

 ..1. Size:863K  nxp
 pmf63un.pdf

PMF63UN PMF63UN

PMF63UN20 V, single N-channel Trench MOSFETRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast

 0.1. Size:712K  nxp
 pmf63une.pdf

PMF63UN PMF63UN

PMF63UNE20 V, N-channel Trench MOSFET20 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage ElectroStatic Discharge (ESD) protection >

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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