PMG45UN Datasheet and Replacement
Type Designator: PMG45UN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 51 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TSSOP6
PMG45UN substitution
PMG45UN Datasheet (PDF)
pmg45un.pdf

PMG45UN20 V, single N-channel Trench MOSFET13 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a SOT363 (SC-88) smallSurface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technolog
Datasheet: PMDXB550UNE , PMDXB600UNE , PMDXB950UPE , PMF63UN , PMF77XN , PMF87EN , PMFPB8032XP , PMFPB8040XP , 10N60 , PMGD130UN , PMGD175XN , PMGD290UCEA , PMN22XN , PMN27XPE , PMN27XPEA , PMN40UPE , PMN40UPEA .
History: STD6NM60N-1 | BL4N150-B | HM2301BJR | TPCA8008-H | CS5N65A3 | GSM6424 | NCE70N900I
Keywords - PMG45UN MOSFET datasheet
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History: STD6NM60N-1 | BL4N150-B | HM2301BJR | TPCA8008-H | CS5N65A3 | GSM6424 | NCE70N900I



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