PMG45UN Specs and Replacement
Type Designator: PMG45UN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 51 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TSSOP6
PMG45UN substitution
- MOSFET ⓘ Cross-Reference Search
PMG45UN datasheet
pmg45un.pdf
PMG45UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT363 (SC-88) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technolog... See More ⇒
Detailed specifications: PMDXB550UNE, PMDXB600UNE, PMDXB950UPE, PMF63UN, PMF77XN, PMF87EN, PMFPB8032XP, PMFPB8040XP, IRFP260N, PMGD130UN, PMGD175XN, PMGD290UCEA, PMN22XN, PMN27XPE, PMN27XPEA, PMN40UPE, PMN40UPEA
Keywords - PMG45UN MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
