PMGD175XN Specs and Replacement
Type Designator: PMGD175XN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: TSSOP6
PMGD175XN substitution
- MOSFET ⓘ Cross-Reference Search
PMGD175XN datasheet
pmgd175xn.pdf
PMGD175XN 30 V, dual N-channel Trench MOSFET Rev. 1 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology 1.3 Applications... See More ⇒
pmgd130un.pdf
PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast ... See More ⇒
Detailed specifications: PMDXB950UPE, PMF63UN, PMF77XN, PMF87EN, PMFPB8032XP, PMFPB8040XP, PMG45UN, PMGD130UN, IRFB4227, PMGD290UCEA, PMN22XN, PMN27XPE, PMN27XPEA, PMN40UPE, PMN40UPEA, PMN42XPE, PMN42XPEA
Keywords - PMGD175XN MOSFET specs
PMGD175XN cross reference
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PMGD175XN substitution
PMGD175XN replacement
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