PMGD175XN Datasheet and Replacement
Type Designator: PMGD175XN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: TSSOP6
PMGD175XN substitution
PMGD175XN Datasheet (PDF)
pmgd175xn.pdf

PMGD175XN30 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology1.3 Applications
pmgd130un.pdf

PMGD130UN20 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast
Datasheet: PMDXB950UPE , PMF63UN , PMF77XN , PMF87EN , PMFPB8032XP , PMFPB8040XP , PMG45UN , PMGD130UN , IRF3710 , PMGD290UCEA , PMN22XN , PMN27XPE , PMN27XPEA , PMN40UPE , PMN40UPEA , PMN42XPE , PMN42XPEA .
History: SI7860DP
Keywords - PMGD175XN MOSFET datasheet
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PMGD175XN equivalent finder
PMGD175XN lookup
PMGD175XN substitution
PMGD175XN replacement
History: SI7860DP



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