PMN22XN MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN22XN
Marking Code: A4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.545 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 5.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.4 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 1.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TSOP6
PMN22XN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN22XN Datasheet (PDF)
pmn22xn.pdf
PMN22XN30 V, single N-channel Trench MOSFETRev. 1 19 January 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fas
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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