All MOSFET. PMN22XN Datasheet

 

PMN22XN Datasheet and Replacement


   Type Designator: PMN22XN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.545 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 5.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 1.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSOP6
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PMN22XN Datasheet (PDF)

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PMN22XN

PMN22XN30 V, single N-channel Trench MOSFETRev. 1 19 January 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fas

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