All MOSFET. PMN42XPEA Datasheet

 

PMN42XPEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMN42XPEA
   Marking Code: B9
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.5 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 207 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TSOP6

 PMN42XPEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMN42XPEA Datasheet (PDF)

 ..1. Size:266K  nxp
 pmn42xpea.pdf

PMN42XPEA PMN42XPEA

PMN42XPEA20 V, P-channel Trench MOSFET21 March 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified3. Applica

 6.1. Size:199K  nxp
 pmn42xpe.pdf

PMN42XPEA PMN42XPEA

PMN42XPE20 V, single P-channel Trench MOSFET14 August 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection1.3 A

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