PMN70XPEA Specs and Replacement

Type Designator: PMN70XPEA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 101 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TSOP6

PMN70XPEA substitution

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PMN70XPEA datasheet

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PMN70XPEA

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PMN70XPEA

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PMN70XPEA

PMN70XP 20 V, P-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipat... See More ⇒

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PMN70XPEA

PMN70EPE 30 V, P-channel Trench MOSFET 23 May 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipati... See More ⇒

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Detailed specifications: PMN27XPEA, PMN40UPE, PMN40UPEA, PMN42XPE, PMN42XPEA, PMN50UPE, PMN50XP, PMN70XPE, AON7408, PMN80XP, PMPB10XNE, PMPB11EN, PMPB12UN, PMPB13XNE, PMPB15XN, PMPB15XP, PMPB16XN

Keywords - PMN70XPEA MOSFET specs

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